features l quadrant (2 2) element format l low cross-talk: 2 % max. l wide spectral response range: 190 to 1000 nm l high-speed response: fc=20 mhz l to-5 metal package applications l laser beam axis alignment l position sensing photodiode si pin photodiode quadrant si pin photodiode S4349 S4349 is a quadrant si pin photodiode having sensitivity in the uv to near ir spectral range. a quadrant element format allows position sensing such as for laser beam axis alignment. general ratings parameter symbol value unit window material - quartz glass - active area a 3.0/4 element mm element gap - 100 m absolute maximum ratings parameter symbol value unit reverse voltage v r max. 20 v operating temperature topr -20 to +60 c storage temperature tstg -55 to +80 c electrical and optical characteristics (ta=25 c, per 1 element) parameter symbol condition typ. max. unit spectral response range 190 to 1000 - nm peak sensitivity wavelength p 720 - nm photo sensitivity s = p 0.45 - a/w dark current i d v r =5 v 0.01 0.2 na temperature coefficient of i d t cid 1.12 - times/c cut-off frequency fc v r =5 v, r l =50 ? =780 nm, -3 db 20 - mhz terminal capacitance ct v r =5 v, f=1 mhz 25 - pf noise equivalent power nep v r =5 v, = p 4.0 10 -15 - w/hz 1/2 cross-talk c l v r =5 v, =780 nm -2% 1
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?007 hamamatsu photonics k.k. si pin photodiode S4349 cat. no. kmpd1007e02 mar. 2007 dn 0.5 0.4 0.3 0.2 0 190 400 600 800 1000 wavelength (nm) photo sensitivity (a/w) 0.6 0.7 0.8 (typ. ta=25 ?c) 0.1 spectral response kmpdb0126ea 0 190 400 600 800 1000 +1.0 +0.5 (typ.) +1.5 -0.5 wavelength (nm) temperature coefficient (%/ ? c) kmpdb0127ea photo sensitivity temperature characteristic dimensional outline (unit: mm) kmpda0114ea reverse voltage (v) dark current 100 pa 1 na 10 pa 1 pa 100 fa 10 fa 0.01 0.1 1 10 100 (typ. ta=25 ? c) dark current vs. reverse voltage kmpdb0128ea reverse voltage (v) terminal capacitance (typ. ta=25 ? c, f=1 mhz) 1 nf 10 pf 1 pf 100 ff 0.1 1 10 100 100 pf kmpdb0129ea terminal capacitance vs. reverse voltage 13.5 active area details of photodiode photosensitive surface window 5.9 0.1 8.1 0.2 9.2 0.2 2.95 4.1 0.2 a bc d 0.1 0.45 lead 0.1 anode d anode a cathode ( case ) anode b anode c cathode ( case ) nc 3.0 5.08 0.2 2
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